Threshold voltage shift refers to the change in the minimum gate voltage required to create a conducting path between the source and drain of a MOSFET. This shift can be caused by factors such as charge trapping, oxide degradation, and variability in manufacturing processes, impacting the performance and reliability of semiconductor devices.

Threshold Voltage Shift

Threshold voltage shift

minimum gate voltage

conducting path

source and drain

A MOSFET, or Metal-Oxide-Semiconductor Field-Effect Transistor, is a type of transistor used for amplifying or switching electronic signals in a wide range of devices. It operates by varying the width of a channel along which charge carriers, such as electrons, flow, making it a fundamental building block in modern electronic devices and integrated circuits.

MOSFET

Charge trapping is a phenomenon where charge carriers, such as electrons or holes, become immobilized in a material due to defects or impurities, impacting the electrical properties of devices. This effect is significant in semiconductor technology, affecting device performance, reliability, and the scaling of electronic components.

charge trapping

Oxide degradation refers to the deterioration of oxide layers, which are critical for protecting materials from corrosion and wear. This process can be accelerated by environmental factors such as temperature, humidity, and exposure to chemicals, leading to compromised structural integrity and functionality of the underlying material.

oxide degradation

variability in manufacturing processes

The performance of semiconductor devices is crucially dependent on material properties, including carrier mobility and band gap, as well as device dimensions and manufacturing precision. Advances in fabrication techniques continue to push the limits of miniaturization and efficiency, leading to faster and more reliable electronic components.

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