Short channel effects occur in MOSFETs when the channel length becomes comparable to the depletion-layer widths of the source and drain junctions, leading to undesirable variations in device behavior. These effects degrade the performance of the transistor by causing threshold voltage roll-off, drain-induced barrier lowering, and increased leakage currents.

Short Channel Effects

Short channel effects

MOSFETs

channel length

depletion-layer widths

source and drain junctions

undesirable variations

device behavior

performance of the transistor

threshold voltage roll-off

Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs where the threshold voltage decreases as the drain voltage increases, leading to increased off-state current and reduced device performance. This phenomenon is significant in modern transistors due to their reduced dimensions, impacting the overall scalability and reliability of integrated circuits.

drain-induced barrier lowering

increased leakage currents

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